| Autor: |
缪国庆 Miao Guo-qing, 宋航 Song Hang, 李志明 Li Zhi-ming, 陈一仁 Chen Yi-ren, 孙晓娟 Sun Xiao-juan, 刘洪波 Liu Hong-bo, 黎大兵 Li Da-bing, 蒋红 Jiang Hong, 尤坤 You Kun |
| Rok vydání: |
2012 |
| Předmět: |
|
| Zdroj: |
Chinese Journal of Luminescence. 33:55-61 |
| ISSN: |
1000-7032 |
| Popis: |
The GaN based metal-insulator-semiconductor(MIS) ultraviolet(UV) photodetectors were fabricated.The dark I-V curves and responsivity spectrum of the photodetectors were mea-sured,and the current transport mechanisms were analyzed.By analyzing the current transport mechanics,it was found that the tunneling-recombination mechanism dominated at the reverse bias and with the forward bias increasing,the current transport mechanism changed from tunneling mechanism to space charge limited current(SCLC) mechanism.Under 5 V reverse bias,it was found that the best responsivity and detectivity of the GaN based MIS detector were 170 mA/W and 2.3×1012 cm·Hz1/2·W-1 at 315 nm.The photo-voltages of GaN based UV photodetectors of different depth of insulator layers were studied,and it was found that the photo-voltage was limited by the tunneling procedure and leakage current. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
