Analysis of the Williams-Hayfield Model for Oxidation Kinetics
| Autor: | A. T. Fromhold |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Thermal oxidation
Renewable Energy Sustainability and the Environment Chemistry Logarithmic growth Oxide Thermodynamics Rate equation Electron Condensed Matter Physics Elementary charge Surfaces Coatings and Films Electronic Optical and Magnetic Materials Condensed Matter::Materials Science symbols.namesake chemistry.chemical_compound Boltzmann constant Materials Chemistry Electrochemistry symbols Constant (mathematics) |
| Zdroj: | Journal of The Electrochemical Society. 153:B97 |
| ISSN: | 0013-4651 |
| Popis: | A theoretical analysis is presented for the physical model of thermal oxidation proposed by Williams and Hayfield. A rate dLldt ∞ exp[-(L/L crit ) 2 ] is deduced herein for oxide film thickness L as a function of time t. The growth rate exponential falloff parameter is L crit = √2ekT/n e e 2 , where n e is a uniform density of trapped electrons in the oxide, T is the Kelvin temperature, and the parameters e, k, and e are the static dielectric constant of the oxide, Boltzmann's constant, and electronic charge magnitude, respectively. Numerical computations compare this rate law with the logarithmic growth law proposed in the original analysis. |
| Databáze: | OpenAIRE |
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