Inverter Logic of AlGaAs/InGaAs Enhancement/Depletion-Mode Pseudomorphic High Electron Mobility Transistors with Virtual Channel Layers

Autor:	Pao Sheng Lin, Wen Shiung Lour, Wen-Chau Liu, Jung Hui Tsai
Rok vydání:	2019
Předmět:	Materials science business.industry law Transistor Mode (statistics) Inverter Optoelectronics business High electron Virtual channel Electronic Optical and Magnetic Materials law.invention
Zdroj:	ECS Journal of Solid State Science and Technology. 8:Q211-Q216
ISSN:	2162-8777 2162-8769
DOI:	10.1149/2.0221910jss
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::65ea2665439bb2ce3a338c82645c4c84 https://doi.org/10.1149/2.0221910jss Zobrazit plný text záznamu