Modelling the operation of an a-Si:H based position sensitive detector

Autor:	Nicola Nedev, D Sueva, S S Georgiev, A Toneva
Rok vydání:	1998
Předmět:	business.industry Chemistry Numerical analysis Detector Electron Condensed Matter Physics Optics Position (vector) General Materials Science Diffusion (business) Atomic physics business Layer (electronics) Voltage
Zdroj:	Journal of Physics: Condensed Matter. 10:5515-5524
ISSN:	1361-648X 0953-8984
DOI:	10.1088/0953-8984/10/25/004
Popis:	A physical model is presented which allows calculation of the carrier and potential distributions and the output voltage of a one dimensional position sensitive detector based on an ITO/a-Si:H/Pd structure. The calculation results are in agreement with those experimentally measured. Using the experimental data the effective electron diffusion length in the ITO layer is estimated to be about 0.65 cm. The effect of surface recombination on the device characteristics is studied by a numerical method.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::65e78336dc076b6097103e7d917f4c45 https://doi.org/10.1088/0953-8984/10/25/004 Zobrazit plný text záznamu