Preparation and characterization of Ge epitaxially grown on nano-structured periodic Si pillars and bars on Si(001) substrate
| Autor: | Grzegorz Kozlowski, Yuji Yamamoto, Jana Matejova, Thomas Schroeder, Bernd Tillack, Markus Andreas Schubert, Peter Zaumseil, Joachim Bauer |
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| Rok vydání: | 2012 |
| Předmět: |
Diffraction
Nanostructure Materials science Silicon Scattering business.industry Metals and Alloys Oxide chemistry.chemical_element Germanium Surfaces and Interfaces Epitaxy Surfaces Coatings and Films Electronic Optical and Magnetic Materials Crystallography chemistry.chemical_compound chemistry Nano Materials Chemistry Optoelectronics business |
| Zdroj: | Thin Solid Films. 520:3240-3244 |
| ISSN: | 0040-6090 |
| Popis: | The selective epitaxial growth of germanium on nano-structured periodic silicon pillars and bars with 360 nm periodicity on Si(001) substrate is studied to evaluate the applicability of nano-heteroepitaxy on the Ge–Si system for different fields of application. It is found that SiO 2 used as masking material plays the key role to influence the strain situation in the Si nano-islands. To analyze this in detail, X-ray diffraction techniques in combination with theoretical simulations based on the kinematical X-ray scattering from laterally strained nano-structures and finite element method (FEM) calculations of the strain field are applied. The oxide related strain in the Si scales about linearly with the thickness of the SiO 2 mask, but FEM simulations supposing a homogeneous stress distribution in the oxide are not sufficient to describe the local strain distribution in the nano-structures. It is demonstrated that the Ge lattice relaxes completely during growth on the Si nano-islands by generation of misfit dislocations at the interface, but a high structural quality of Ge can be achieved by suited growth conditions. |
| Databáze: | OpenAIRE |
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