| Popis: |
To realize the near-infrared detection of silicon-based detectors and avoid the incompatibility between III-V photodetectors and silicon-based integrated circuits, the development of Ge/Si detectors has become a research hotspot, with the breakthrough of preparation technology of Ge / Si heterojunction materials. In this paper, the research progress of Ge / Si heterojunction photodetectors in the wavelength range of 1.1μm to 1.6μm is summarized from the aspects of the device structure, working principle, the current situation at home and abroad, the advantages and disadvantages, and so on. |
