High performance enhancement-mode thin-film transistor with graphene quantum dot-decorated In2O3 channel layers

Autor:	Xiaofen Xu, Gang He, Shanshan Jiang, Leini Wang, Wenhao Wang, Yanmei Liu, Qian Gao
Rok vydání:	2022
Předmět:	General Chemical Engineering General Chemistry
Zdroj:	RSC Advances. 12:14986-14997
ISSN:	2046-2069
DOI:	10.1039/d2ra01051h
Popis:	Due to the quantum confinement and edge effects, there has been ongoing enthusiasm to provide deep insight into graphene quantum dots (GQDs), serving as attractive semiconductor materials.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::65ceaada0b21dbfb5264aa66f81c2d30 https://doi.org/10.1039/d2ra01051h Zobrazit plný text záznamu