Recrystallization and sulfur diffusion in CdCl2-treated CdTe/CdS thin films
| Autor: | Brian E. McCandless, Robert W. Birkmire, L. V. Moulton |
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| Rok vydání: | 1997 |
| Předmět: |
inorganic chemicals
Materials science Renewable Energy Sustainability and the Environment Scanning electron microscope Analytical chemistry Recrystallization (metallurgy) Condensed Matter Physics Cadmium telluride photovoltaics Electronic Optical and Magnetic Materials Grain growth Surface coating Transmission electron microscopy Electrical and Electronic Engineering Thin film Spectroscopy |
| Zdroj: | Progress in Photovoltaics: Research and Applications. 5:249-260 |
| ISSN: | 1099-159X 1062-7995 |
| Popis: | The role of CdCl2 in prompting recrystallization, grain growth and interdiffusion between CdS and CdTe layers in physical vapor-deposited CdS/CdTe thin-film solar cells is presented. Several CdTe/CdS thin-film samples with different CdTe film thicknesses were treated in air at 415°C for different times with and without a surface coating of CdCl2. The samples were characterized by scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy, x-ray diffractometry and optical absorption. The results show that CdCl2 treatment enhances the recrystallization and diffusion processes, leading to a compositional variation within the CdTe layer due to diffusion of sulfur from the CdS. The highest sulfur concentrations observed after 30 min treatments with CdCl2 at 415°C are near the solubility limit for sulfur in CdTe. The compositional distributions indicated by x-ray diffraction measurements of samples with different CdTe thickness show that the S-rich CdTe1−xSx region lies near the CdTe/CdS interface. A multiple-step mixing process must be inferred to account for the diffraction profiles obtained. © 1997 John Wiley & Sons, Ltd. |
| Databáze: | OpenAIRE |
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