Resonant magnetic tunnel junction at 0°K: I-V characteristics and magnetoresistance
| Autor: | C. A. Dartora, G. G. Cabrera |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Materials science
Magnetoresistance Condensed matter physics Scattering Magnon General Physics and Astronomy Spin polarized scanning tunneling microscopy Giant magnetoresistance Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Tunnel magnetoresistance Tunnel junction Condensed Matter::Superconductivity Condensed Matter::Strongly Correlated Electrons Quantum tunnelling |
| Zdroj: | Journal of Applied Physics. 97:033708 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.1846948 |
| Popis: | In this paper we analyze the main transport properties of a simple resonant magnetic tunnel junction (FM-IS-METAL-IS-FM structure) taking into account both elastic and magnon-assisted tunneling processes at low voltages and temperatures near 0°K. We show the possibility of magnetoresistance inversion as a consequence of inelastic processes and spin-dependent transmission coefficients. Resonant tunneling can also explain the effect of scattering by impurities located inside an insulating barrier. |
| Databáze: | OpenAIRE |
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