Growth of coherent BGaN films using BBr3 gas as a boron source in plasma assisted molecular beam epitaxy
| Autor: | Richard Cramer, Bastien Bonef, James S. Speck, Cyrus E. Dreyer, Chris G. Van de Walle, John H. English |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Band gap Wide-bandgap semiconductor Gallium nitride 02 engineering and technology Surfaces and Interfaces 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Surfaces Coatings and Films chemistry.chemical_compound Crystallography Lattice constant chemistry 0103 physical sciences Sapphire Optoelectronics Thin film 0210 nano-technology business Molecular beam epitaxy Wurtzite crystal structure |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 35:041509 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.4986185 |
| Popis: | Incorporating boron into gallium nitride to make BxGa1-xN solid solutions would create an avenue for extreme alloys due to the fact that wurtzite phase BN has a larger band gap and smaller lattice parameters compared to GaN. In this paper, the authors report the growth of high crystal quality, random alloy BxGa1-xN thin films with x up to 3.04% grown on (0001) Ga-face GaN on sapphire substrates using plasma assisted molecular beam epitaxy and BBr3 gas as a B source. High resolution x-ray diffraction was used to measure both the c plane spacing and the strain state of the films. It was determined that the films were fully coherent to the GaN substrate. Elastic stress-strain relations and Vegard's law were used to calculate the composition. Atom probe tomography was used to confirm that the BxGa1-xN films were random alloys. In addition to demonstrating a growth technique for high crystal quality BxGa1-xN thin films, this paper demonstrated the use of BBr3 as a novel B source in plasma assisted molecular be... |
| Databáze: | OpenAIRE |
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