Precipitates caused by prolonged high-temperature annealing in floating zone silicon wafer grown from Czochralski single-crystal rod

Autor:	Hitoshi Habuka, Haruo Nakazawa, Masaaki Ogino, Yoshikazu Takahashi, Hideaki Teranishi
Rok vydání:	2013
Předmět:	Materials science Silicon Annealing (metallurgy) Mechanical Engineering Analytical chemistry chemistry.chemical_element Condensed Matter Physics Monocrystalline silicon Crystallography chemistry Mechanics of Materials General Materials Science Wafer Ingot Single crystal Silicon oxidation
Zdroj:	Materials Science in Semiconductor Processing. 16:923-927
ISSN:	1369-8001
DOI:	10.1016/j.mssp.2013.01.020
Popis:	The behavior of precipitates in a floating zone silicon crystal produced from a Czochralski single-crystal ingot has been studied. Large precipitates of α-Si 3 N 4 crystal, having a dimension of about 2 μm, were formed at the mid-depth in the wafer by annealing at a high temperature in an ambient N 2 (70%)+O 2 (30%) atmosphere. The number of precipitates detected by cross-sectional X-ray topography increased with increasing annealing time. Because preannealing accompanying silicon oxidation in an ambient Ar+O 2 atmosphere prevented the precipitates formation, interstitial silicon is considered to eliminate the origin of precipitate.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::65b27185bf4b3ffef46a503ff39fdc6f https://doi.org/10.1016/j.mssp.2013.01.020 Zobrazit plný text záznamu Full Text from ScienceDirect