Observation of the integer quantum Hall effect in high quality, uniform wafer-scale epitaxial graphene films

Autor:	Stephen W. Howell, Thomas A. Friedmann, Taisuke Ohta, Anthony Joseph Ross Iii, Wei Pan
Rok vydání:	2010
Předmět:	Electron density Electron mobility Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Quantum spin Hall effect Graphene law Thermal Hall effect Landau quantization Quantum Hall effect Sheet resistance law.invention
Zdroj:	Applied Physics Letters. 97:252101
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.3525588
Popis:	We report the observation of the integer quantum Hall states at Landau level fillings of ν=2, 6, and 10 in a Hall bar device made of a single-layer epitaxial graphene film on the silicon-face of silicon-carbide prepared via argon-assisted graphitization. The two-dimensional electron gas exhibits a low-temperature (at 4 K) carrier mobility of ∼14 000 cm2/V s at the electron density of 6.1×1011 cm−2. Furthermore, the sheet resistance obtained from four-probe measurements across the whole area (12×6 mm2) of another specimen grown under similar condition displays roughly uniform values (∼1600 Ω/square), suggesting that the macroscopic steps and accompanying multilayer graphene domains play a minor role in the low-temperature electronic transport.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::65ac815b11dee2d0dd6d8724ba862138 https://doi.org/10.1063/1.3525588 Zobrazit plný text záznamu