A dynamic body discharge technique for SOI circuit applications
| Autor: | P.F. Lu, F. Assaderaghi, Ching-Te Chuang, M.J. Saccamango, Jente Benedict Kuang |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Engineering
business.industry Amplifier Electrical engineering Silicon on insulator Hardware_PERFORMANCEANDRELIABILITY Integrated circuit design law.invention Integrated injection logic CMOS law Hardware_INTEGRATEDCIRCUITS Operational amplifier Electronic engineering business Hardware_LOGICDESIGN Electronic circuit Voltage |
| Zdroj: | 1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345). |
| DOI: | 10.1109/soi.1999.819861 |
| Popis: | It has been reported (Kuang et al., 1997; Lu et al., 1997) that SOI passgate circuits suffer history effects and adverse initial-cycle parasitic bipolar currents, which cause difficulties in circuit timing and limit direct design reuse from original bulk circuits. SOI device body history can also induce transfer characteristics mismatch in dual-railed static or dynamic CMOS circuits, resulting in speed degradation or functional failures. This paper describes an efficient technique to alleviate initial-cycle bipolar currents while retaining the low-V/sub t/ floating body feature when the SOI devices concerned are on. We also present a dynamic body discharge technique to eliminate the mismatch problems in cross-coupled SOI CMOS topologies, for use in a variety of circuit families such as cascade voltage switch logic, latch-type sense amplifiers and analog operational amplifiers. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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