Improved stability of C-doped GaAs grown by chemical beam epitaxy for heterojunction bipolar transistor applications

Autor:	M. Juhel, J.L. Benchimol, P. Launay, Bernard Sermage, Bernard Jusserand, F. Alexandre, R. Driad
Rok vydání:	1996
Předmět:	Chemistry Heterojunction bipolar transistor Bipolar junction transistor Analytical chemistry Carrier lifetime Condensed Matter Physics Epitaxy Chemical beam epitaxy Inorganic Chemistry Secondary ion mass spectrometry chemistry.chemical_compound Materials Chemistry Trimethylgallium Thin film
Zdroj:	Journal of Crystal Growth. 158:210-216
ISSN:	0022-0248
Popis:	Carbon-doped GaAs epitaxial layers were grown by chemical beam epitaxy using trimethylgallium and arsine as growth precursors. The behaviour of incorporated hydrogen as a function of the carbon doping level, annealing conditions and growth temperature has been investigated. The epilayers were characterized by Hall measurements, secondary ion mass spectrometry, Raman spectroscopy and time-resolved photoluminescence. The degradation of minority carrier lifetime for C-doped GaAs is shown to be more drastic as the carbon concentration and annealing temperature are increased. Despite the use of tri-methylgallium, only a small amount of CH complexes were observed in the epilayers. High growth temperatures to remove the remaining hydrogen and their impact on heterojunction bipolar transistor stability have been also investigated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::659f0106fe5028cad2a16b446d3e7639 https://doi.org/10.1016/0022-0248(95)00442-4 Zobrazit plný text záznamu Full Text from ScienceDirect