High Channel Mobility 4H-SiC MOSFETs by As and P Implantation Prior to Thermal Oxidation in N2O Atmosphere

Autor:	Victor V. Luchinin, Giovanni Alfieri, Aleksey I. Mikhaylov, H. Bartolf, Lars Knoll, Alexey V. Afanasyev, Sergey A. Reshanov, Adolf Schöner, Renato Minamisawa
Rok vydání:	2016
Předmět:	010302 applied physics Thermal oxidation Fabrication Materials science business.industry Mechanical Engineering Doping chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences chemistry Mechanics of Materials Aluminium Gate oxide 0103 physical sciences MOSFET Electronic engineering Optoelectronics Breakdown voltage General Materials Science 0210 nano-technology business
Zdroj:	Materials Science Forum. 858:651-654
ISSN:	1662-9752
Popis:	High channel mobility 4H-SiC MOSFETs have been demonstrated by phosphorus and arsenic implantation prior to thermal oxidation in N2O. The maximum field-effect mobility of 81 and 114 cm2/Vs were achieved, respectively. The MOSFET fabrication was done on lightly aluminium doped p-type epitaxial layers and on heavily aluminium implanted p-well.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::659ed0dcaffcfd9c3120dcf1fbfc845d https://doi.org/10.4028/www.scientific.net/msf.858.651 Zobrazit plný text záznamu