Dirac-surface-state-dominated spin to charge current conversion in the topological insulator ( Bi0.22Sb0.78)2Te3 films at room temperature
| Autor: | C. I. L. de Araujo, R. P. Loreto, Cui-Zu Chang, J. Holanda, Jagadeesh S. Moodera, O. Alves Santos, Sergio M. Rezende, Joaquim Mendes, A. Azevedo |
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| Rok vydání: | 2017 |
| Předmět: |
Spin pumping
Materials science Condensed matter physics Inverse 02 engineering and technology Electron 021001 nanoscience & nanotechnology 01 natural sciences Ferromagnetic resonance symbols.namesake Topological insulator 0103 physical sciences symbols Condensed Matter::Strongly Correlated Electrons 010306 general physics 0210 nano-technology Spin-½ Surface states Nernst effect |
| Zdroj: | Physical Review B. 96 |
| ISSN: | 2469-9969 2469-9950 |
| Popis: | We report the spin-to-charge current conversion in an intrinsic topological insulator (TI) ${(\mathrm{B}{\mathrm{i}}_{0.22}\mathrm{S}{\mathrm{b}}_{0.78})}_{2}\mathrm{T}{\mathrm{e}}_{3}$ film at room temperature. The spin currents are generated in a thin layer of permalloy (Py) by two different processes, the spin pumping effect (SPE) and the spin Seebeck effect (SSE). In the first, we use microwave-driven ferromagnetic resonance of the Py film to generate a SPE spin current that is injected into the TI ${(\mathrm{B}{\mathrm{i}}_{0.22}\mathrm{S}{\mathrm{b}}_{0.78})}_{2}\mathrm{T}{\mathrm{e}}_{3}$ layer in direct contact with Py. In the second, we use the SSE in the longitudinal configuration in Py without contamination by the anomalous Nernst effect, which was made possible with a thin NiO layer between the Py and ${(\mathrm{B}{\mathrm{i}}_{0.22}\mathrm{S}{\mathrm{b}}_{0.78})}_{2}\mathrm{T}{\mathrm{e}}_{3}$ layers. The spin-to-charge current conversion is dominated by the TI surface states and is attributed to the inverse Edelstein effect (IEE), which is made possible by the spin-momentum locking in the electron Fermi contours due to the Rashba field. The measurements by the two techniques yield very similar values for the IEE parameter, which are larger than the reported values in the previous studies on topological insulators. |
| Databáze: | OpenAIRE |
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