Doping influence on microwave detection by metal–porous silicon contacts
| Autor: | Algirdas Sužiedėlis, Jonas Gradauskas, N. Samuolienė, Steponas Ašmontas, J. Stupakova, Andrius Maneikis |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
business.industry Doping 02 engineering and technology General Chemistry Nanosecond 010402 general chemistry 021001 nanoscience & nanotechnology Porous silicon 01 natural sciences Signal 0104 chemical sciences Responsivity Optoelectronics General Materials Science Surface layer 0210 nano-technology business Microwave Diode |
| Zdroj: | Applied Physics A. 124 |
| ISSN: | 1432-0630 0947-8396 |
| DOI: | 10.1007/s00339-018-1785-0 |
| Popis: | We present the study of voltage signal rise across both additionally doped and undoped porous silicon diode sensors exposed to microwave radiation. The doped ones exhibit fast, of the nanosecond order, response times, but lower voltage–power responsivity values as compared to similar diodes but containing no porous layer. Insertion of porous surface layer into the undoped samples can significantly enhance their responsivity, however, they demonstrate much slower, of the order of tens of microseconds, response to microwave-modulating pulse. Microwave radiation induces voltage signals of opposite polarity in different types of the porous samples. Models all based mainly on hot carrier effects are exploited to explain the experimental results. Possible aspects of application are discussed as well. |
| Databáze: | OpenAIRE |
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