Dual gate oxide integrity improvement by implementing nitrogen implantation technology

Autor:	Joseph Ku, Tuung Luoh, Chi-Tung Huang, Jung-Yu Hsieh, Ling-Wuu Yang, Kuang-Chao Chen, Chih-Yuan Lu, H. Chung
Rok vydání:	2005
Předmět:	Nuclear and High Energy Physics Materials science business.industry Oxide chemistry.chemical_element Time-dependent gate oxide breakdown Equivalent oxide thickness Nitrogen chemistry.chemical_compound chemistry Gate oxide Optoelectronics Breakdown voltage Wafer business Instrumentation Mask ROM
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 237:183-187
ISSN:	0168-583X
DOI:	10.1016/j.nimb.2005.04.098
Popis:	Dual gate oxide layers were implemented in 0.15 μm Mask ROM device. Two predominant approaches were carried out to achieve a combination of thin and thick gate oxides. One was the conventional, growth-etching-growth, process and another one was oxidation on wafers with pre-gate-oxide nitrogen implantation. The retardation rate of oxidation was dependent on the nitrogen implant dosage but independent on implant energy. For thin gate oxide, device performance by using nitrogen implantation prior to gate oxide demonstrated better thickness uniformity and breakdown voltage than that by using conventional approach. Furthermore, directly formed thick gate oxide achieved better thickness uniformity and breakdown voltage than that of the grow-etching-grow process.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6572c8ebf5c82cb2ab7d865c530acb0f https://doi.org/10.1016/j.nimb.2005.04.098 Zobrazit plný text záznamu Full Text from ScienceDirect