Observation of submicronic contacts and vias by scanning ion and electron microscopy
| Autor: | D. Lafond, R. Pantel, G. Mascarin, J. P. Gonchond |
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| Rok vydání: | 1994 |
| Předmět: |
Interconnection
Materials science Ion beam Scanning electron microscope business.industry Electron Management Science and Operations Research Focused ion beam Ion law.invention law Electronic engineering Optoelectronics Electron microscope Electron beam-induced deposition Safety Risk Reliability and Quality business |
| Zdroj: | Quality and Reliability Engineering International. 10:319-324 |
| ISSN: | 1099-1638 0748-8017 |
| DOI: | 10.1002/qre.4680100412 |
| Popis: | Scanning ion and electron microscopy of focused ion beam cross-sections has been used to observe 0·6 μm contacts and 0·7 μm vias of a 0·5 μm CMOS technology. Three different kinds of cross-sections have been tested to improve the observation quality. The comparison of images obtained with ions and electrons provides information on ion and electron contrast mechanisms. This technique has been used to identify very small defects in interconnection structures and to evaluate the 0·5 μm CMOS metallization process. |
| Databáze: | OpenAIRE |
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