Impact of Hot-Carrier Degradation Due to Moisture Diffusion Based on 0.153um CMOS

Autor:	Zhengyu Lin, Dejin Wang, Fei Yang, Yaohui Zhou, Xiaofeng Sun, Haoyu Wen
Rok vydání:	2022
Předmět:	History Computer Science Applications Education
Zdroj:	Journal of Physics: Conference Series. 2248:012011
ISSN:	1742-6596 1742-6588
DOI:	10.1088/1742-6596/2248/1/012011
Popis:	The study aims to investigate enhanced hot-carrier-induced degradation of MOSFETs due to moisture diffusion from inter-metal oxides. By studying different split of back-end in details, it is confirmed the impact of hot-carrier-induced degradation due to moisture diffusion under different conditions. Analyzing how much current drops after 10K times of programming and erasing verifies the cause of device degradation. Experimental results indicate that HDP thickness reduction, alloy after HDP, deposition of SRO layer before HDP and material of TEOS can efficiently enhance hot-carrier-induced degradation. According to the experimental results, the influence of moisture diffusion has been clarified, providing directions for enhancing the hot-carrier-induced degradation of MOSFETs, and providing relevant experience for subsequent product development.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::656dfe68cf5d63a393ad0b3bbbdfb6bc https://doi.org/10.1088/1742-6596/2248/1/012011 Zobrazit plný text záznamu