Properties of Selectively Grown Si:P Layers below 500°C for Use in Stacked Nanosheet Devices
| Autor: | Erik Rosseel, Clement Porret, Andriy Yakovitch Hikavyy, Roger Loo, Olivier Richard, Gerardo Tadeo Martinez, Dmitry Batuk, Hans Mertens, Eugenio Dentoni Litta, Naoto Horiguchi |
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| Rok vydání: | 2022 |
| Zdroj: | ECS Transactions. 109:93-98 |
| ISSN: | 1938-6737 1938-5862 |
| Popis: | We report on selectively grown Si:P layers below 500°C targeting application in stacked nanosheet-based devices. In contrast to conventional approaches where selectivity is obtained at low temperatures using Cyclic-Deposition and Etch (CDE) with HCl/GeH4 as an etchant, we rely for this work on Cl2-based etching and the use of a higher order Si precursor which allows to maintain a high wafer throughput at low temperatures. We demonstrate that selective Si:P layers can be obtained with a resistivity below 0.3 mOhm.cm which can be grown selectively on fins and stacks with Si nanosheets. |
| Databáze: | OpenAIRE |
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