3-D stacked CMOS inverters using Pt/HfO2 on Si substrate for vertical integrated CMOS applications
| Autor: | Won-Ju Cho, Soon-Young Oh, Chang-Geun Ahn, Moongyu Jang, Jong-Heon Yang |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
business.industry Gate dielectric Integrated circuit Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials PMOS logic law.invention CMOS Thin-film transistor law Optoelectronics Inverter Electrical and Electronic Engineering business NMOS logic Electronic circuit |
| Zdroj: | Microelectronic Engineering. 85:1206-1209 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2007.12.026 |
| Popis: | Three-dimensionally stacked CMOS inverters were fabricated by using the poly-Si thin film transistor (TFT) with hafnium-oxide (HfO"2) gate dielectric and Pt gate electrode. For fabrication of 3-D stacked CMOS inverters consist of poly-Si NMOS/interlayer dielectric film (ILD)/poly-Si PMOS, a reduced process temperature is necessary to avoid the degradation of NMOS at lower poly-Si layer fabricated prior to PMOS at upper poly-Si layer. The high quality of laser crystallized poly-Si film was obtained with smooth surface and excellent crystallinity. The 3-D stacked CMOS inverters fabricated by stacking the poly-Si NMOS TFT and PMOS TFT showed good output characteristics, DC voltage transfer characteristics, transient characteristics and voltage gain for applications of the vertical integrated CMOS circuits. |
| Databáze: | OpenAIRE |
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