Analysis of mechanisms of carrier emission in the p-i-n structures with In(Ga)As quantum dots
| Autor: | A. M. Nadtochy, Alexey E. Zhukov, S. A. Blokhin, Nikolai N. Ledentsov, A. S. Payusov, S. S. Mikhrin, E. S. Shatalina, A. R. Kovsh, Mikhail V. Maximov, V. M. Ustinov, A. V. Savelyev |
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| Rok vydání: | 2010 |
| Předmět: |
Photocurrent
Physics Nanostructure Condensed matter physics Fermion Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Molecular physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Quantum dot Charge carrier Spectroscopy Quantum tunnelling |
| Zdroj: | Semiconductors. 44:1308-1312 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | With the help of the photocurrent spectroscopy, the mechanism of emission of charge carriers from energy levels of the (In,Ga)As/(Al,Ga)As quantum dots of different design are studied. Thermal activation is shown to be the main mechanism of carrier emission from the quantum dots for the isolated layer of quantum dots separated by wide (Al,Ga)As spacer layers. At a small width of the (Al,Ga)As spacer layer, when electron binding of separate layers of the quantum dots in the vertical direction takes place, the role of the tunneling mechanism of carrier emission between the vertically coupled quantum dots increases. |
| Databáze: | OpenAIRE |
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