Retraction Note: High resolution transmission electron microscope studies of a-Si:H solar cells
| Autor: | K. Henkel, A. R. M. Yusoff, M. N. Syahrul |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Amorphous silicon
chemistry.chemical_compound Materials science chemistry Band gap Transmission electron microscopy Open-circuit voltage Nanocrystalline silicon Analytical chemistry General Physics and Astronomy High resolution Substrate (electronics) High-resolution transmission electron microscopy |
| Zdroj: | Pramana. 81:1069-1069 |
| ISSN: | 0973-7111 0304-4289 |
| DOI: | 10.1007/s12043-013-0514-7 |
| Popis: | Hydrogenated amorphous silicon (a-Si:H) single junction solar cells with high open circuit voltage (V oc) are fabricated using a wide bandgap boron-doped Si:H p-layer deposited at high hydrogen dilution, low substrate temperature and with H2-plasma treatment that promotes nanocrystalline silicon (nc-Si:H) formation. This paper presents the structure of this p-type material characterized by high resolution transmission electron microscope (HRTEM). It is found that the p-layer that leads to high V oc a-Si:H solar cells is a mixed-phase material that contains fine-grained nc-Si:H embedded in a-Si:H matrix. |
| Databáze: | OpenAIRE |
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