Fabrication of p-MoTe2/n-MoS2 heterostructure and its electrical characterization
| Autor: | Zhengzong Sun, Yangye Sun, Ling Tong, Xiaoxi Li, Jingyi Ma, Xinyu Chen, Xiaojiao Guo, Minxing Zhang, Wenzhong Bao, Simeng Zhang |
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| Rok vydání: | 2021 |
| Předmět: |
Fabrication
Materials science business.industry Transistor Heterojunction 02 engineering and technology Chemical vapor deposition 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences law.invention Characterization (materials science) symbols.namesake Rectifier law symbols Optoelectronics Field-effect transistor van der Waals force 0210 nano-technology business |
| Zdroj: | 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). |
| DOI: | 10.1109/edtm50988.2021.9420815 |
| Popis: | We demonstrate the fabrication and characterization of large-area van der Waals heterostructure array composed of chemical vapor deposition (CVD) grown multilayer (ML) 2H-MoTe 2 and single-layer (SL) 2H-MoS 2 , which exhibits excellent rectifier properties. The transfer characteristics of field-effect transistors (FETs) are also investigated. Our work acquires excellent homogeneity and device performance, which facilitates the application of two-dimensional (2D) materials in electronics. |
| Databáze: | OpenAIRE |
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