Comparison With Nitride Interface Defects and Nanocrystals for Charge Trapping Layer Nanowire Gate-All-Around Nonvolatile Memory Performance
| Autor: | Yung-Chun Wu, Yu-Hsien Lin, Yu-Ru Lin, Yi-Wei Chiang, Wei-Cheng Wang |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Fabrication Silicon Nanowire chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Nitride 01 natural sciences Gallium arsenide chemistry.chemical_compound Hardware_GENERAL 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Electrical and Electronic Engineering 010302 applied physics Hardware_MEMORYSTRUCTURES business.industry 021001 nanoscience & nanotechnology Electronic Optical and Magnetic Materials Non-volatile memory chemistry Nanocrystal Logic gate Optoelectronics 0210 nano-technology business |
| Zdroj: | IEEE Transactions on Electron Devices. 65:493-498 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2017.2779182 |
| Popis: | This paper demonstrates novel silicon–oxide–nitride–nitride–oxide–silicon (SONNOS) and silicon-oxide-nanocrystals-oxide-silicon (SOncOS) nonvolatile memory (NVM) that is based on nanowires gate-all-around (GAA) structure. SONNOS and SOncOS NVM exploit doubly stacked Si3N4 (NN) interface defects and silicon nanocrystals as charge trapping layers, respectively. Experimental results reveal that SONNOS NVM has superior memory characteristics than SOncOS NVM. With respect to memory reliability, the SONNOS NVM retains 86% memory window after 104 program/erase cycles, and the memory window retains 42% of the originally stored charge after ten years. Such doubly stacked Si3N4 layers provide additionally charge trapping sites in CTL, improving the memory performance of NVM. In the future, SONNOS GAA NVMs will be easily integrated in 3-D nand flash memory applications. |
| Databáze: | OpenAIRE |
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