Proposal for novel magnetic memory device with spin momentum locking materials
| Autor: | Xiaowan Qin, Youguang Zhang, Lang Zeng, Weisheng Zhao, Deming Zhang, Mingzhi Long, Tianqi Gao |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Physics Hardware_MEMORYSTRUCTURES Condensed matter physics Spin-transfer torque NAND gate 01 natural sciences Momentum Hardware_GENERAL Topological insulator 0103 physical sciences Array data structure Torque Hardware_ARITHMETICANDLOGICSTRUCTURES 010306 general physics Quantum tunnelling Spin-½ |
| Zdroj: | NANOARCH |
| Popis: | In this work, novel magnetic memory device is proposed based on fascinating Spin Momentum Locking (SML) materials. The device utilizes direct spin current to charge current conversion and don't need Magnetic Tunneling Junction (MTJ) structure. The NOR, NAND and 3D array structure of the proposed magnetic memory device are demonstrated and discussed. |
| Databáze: | OpenAIRE |
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