A High-Density Ternary Content-Addressable Memory Using Single-Electron Transistors
| Autor: | Hiroshi Inokawa, Tatsuo Higuchi, Yasuo Takahashi, Katsuhiko Degawa, Takafumi Aoki, Katsuhiko Nishiguchi |
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| Rok vydání: | 2006 |
| Předmět: |
Engineering
Hardware_MEMORYSTRUCTURES business.industry Circuit design Transistor Hardware_PERFORMANCEANDRELIABILITY Content-addressable memory law.invention Set (abstract data type) CMOS law MOSFET Hardware_INTEGRATEDCIRCUITS Electronic engineering Circuit complexity Ternary operation business Hardware_LOGICDESIGN |
| Zdroj: | ISMVL |
| DOI: | 10.1109/ismvl.2006.6 |
| Popis: | This paper presents a circuit design of a Ternary Content-Addressable Memory (TCAM) using Single- Electron Transistors (SETs). The proposed TCAM cell employs a SET-based ternary memory and a dual-gate SET for ternary data matching. The multi-level functionality of SET is fully utilized to reduce circuit complexity. Basic matching operation of the TCAM cell is verified using a multi-gate SET and a MOSFET fabricated on the same Silicon-On-Insulator (SOI) wafer by Pattern-Dependent OXidation (PADOX) process. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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