A Nb/AlOx/Nb trilayer process for the fabrication of X-ray detectors
| Autor: | Ph. Lerch, A. Jaggi, S.P. Zhao, H. R. Ott, F. Finkbeiner, A. Zehnder |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Auxiliary electrode
Materials science business.industry Niobium Energy Engineering and Power Technology chemistry.chemical_element Sputter deposition Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention chemistry law Etching (microfabrication) Electrode Optoelectronics Electrical and Electronic Engineering Photolithography Reactive-ion etching business Current density |
| Zdroj: | Physica C: Superconductivity. 214:345-349 |
| ISSN: | 0921-4534 |
| DOI: | 10.1016/0921-4534(93)90836-f |
| Popis: | A new Nb/AlO x /Nb trilayer process for X-ray detector applications has been developed. The process employs a movable mechanical slit which, after the sputter deposition of the base Nb electrode followed by a thin layer of Al and its oxidation, is shifted to a second position where the Nb counter electrode is deposited. The overlap area of the two electrodes forms the junction are after final patterning by standard photolithography and reactive ion etching. The best junctions so far obtained have, at 4.2 K, typically a quality factor of 42 mV with a Josepshon current density of 1200 A/cm 2 , and a tunneling time τ tun in the range of 50 to 500 ns. We discuss several aspects of this technique in comparison with the selective niobium anodization process (SNAP) and the selective niobium etching process (SNEP). |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|