Simultaneous diffusion of Zn and Cd in InGaAs
| Autor: | U Wielsch, P Ambree, B Gruska |
|---|---|
| Rok vydání: | 1990 |
| Předmět: |
chemistry.chemical_classification
Cadmium Analytical chemistry chemistry.chemical_element Zinc Condensed Matter Physics Acceptor Ampoule Electronic Optical and Magnetic Materials Secondary ion mass spectrometry chemistry Lattice (order) Materials Chemistry Electrical and Electronic Engineering Inorganic compound Junction depth |
| Zdroj: | Semiconductor Science and Technology. 5:923-927 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/5/9/001 |
| Popis: | Diffusion experiments of Zn and Cd in VPE InGaAs, lattice matched to InP, are reported. A closed ampoule technique is used. For the simultaneous diffusion of Zn and Cd from a Zn3As2/Cd3As2 source an increasing amount of Cd3As2 results in a decreasing p-n junction depth whereas a high hole concentration (more than 1020 cm-3 at Tdiff=600 degrees C) fixed by the Zn acceptor concentration level can be realised. The Cd atoms whose interstitial diffusion coefficient is small compared with that of the Zn interstitials penetrate into the crystal as deep as the Zn atoms. These experimental results are in accordance with numerical simulations of the simultaneous diffusion in III-V compounds starting from the concept of an interstitial-substitutional diffusion mechanism. The diffusion method presented is suitable for the generation of shallow- and high-doped p-type regions during controllable diffusion times. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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