BEOL Compatible Extremely Scaled Bilayer ITO/IGZO Channel FET with High Mobility 106 cm2/V.s

Autor:	Sonu Hooda, Manohar Lal, Chen Chun-Kuei, Shih-Hao Tsai, Evgeny Zamburg, Aaron Voon-Yew Thean
Rok vydání:	2023
Zdroj:	2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
DOI:	10.1109/edtm55494.2023.10103073
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::64f9c1b807041dfb13e5b838c0dcb9cf https://doi.org/10.1109/edtm55494.2023.10103073 Zobrazit plný text záznamu