Unit cell of strained GeSi
| Autor: | Joseph C. Woicik, C. A. King, K. E. Miyano, Charles E. Bouldin |
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| Rok vydání: | 1997 |
| Předmět: | |
| Zdroj: | Physical Review B. 55:15386-15389 |
| ISSN: | 1095-3795 0163-1829 |
| Popis: | The local structure within the unit cell of strained-GeSi layers grown on Si(001) has been examined by polarization-dependent extended x-ray-absorption fine structure. First-neighbor bond lengths are found to deviate only slightly from their unstrained values; however, the distortion of the cubic-unit cell by strain leads to measurable polarization-dependent changes in first-shell coordination and second-shell distances. A unifying picture of bond lengths and elasticity in strained-layer semiconductors is presented. {copyright} {ital 1997} {ital The American Physical Society} |
| Databáze: | OpenAIRE |
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