Base Transport Limited Current Gain Analysis for Low-Noise SiGe DHBTs

Autor:	Panwar Brishbhan, Khanduri Gagan
Rok vydání:	2004
Předmět:	Transport limited Multidisciplinary Materials science Heterostructure-emitter bipolar transistor business.industry Heterojunction bipolar transistor Electronic engineering Optoelectronics Current (fluid) business Base (exponentiation) Low noise
Zdroj:	Journal of Applied Sciences. 4:521-525
ISSN:	1812-5654
DOI:	10.3923/jas.2004.521.525
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::64e8cade7a560cc56811b0029a44ac3d https://doi.org/10.3923/jas.2004.521.525 Zobrazit plný text záznamu