High temperature and high peak-power 808nm QCW bars and stacks
Autor: | G. Bacchin, Bocang Qiu, Stewart D. McDougall, A. Fily, S. Robertson, Berthold Schmidt, V. Loyo-Maldonado, D. Fraser |
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Rok vydání: | 2010 |
Předmět: | |
Zdroj: | SPIE Proceedings. |
ISSN: | 0277-786X |
DOI: | 10.1117/12.843735 |
Popis: | 808 nm QCW bars were fabricated and mounted with hard solder technology onto H-mounts and G-stacks. At room temperature, reliable operation has been demonstrated at 400W at 400A per single 1-cm bar and for a G-stack at 3kW at around 300A. High temperature reliable operation has been demonstrated for both devices up to 95°C. Both types of devices were tested at various pulse widths and duty cycles. Both optical power and wavelength dependencies on the various conditions have been studied. |
Databáze: | OpenAIRE |
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