High temperature and high peak-power 808nm QCW bars and stacks

Autor: G. Bacchin, Bocang Qiu, Stewart D. McDougall, A. Fily, S. Robertson, Berthold Schmidt, V. Loyo-Maldonado, D. Fraser
Rok vydání: 2010
Předmět:
Zdroj: SPIE Proceedings.
ISSN: 0277-786X
DOI: 10.1117/12.843735
Popis: 808 nm QCW bars were fabricated and mounted with hard solder technology onto H-mounts and G-stacks. At room temperature, reliable operation has been demonstrated at 400W at 400A per single 1-cm bar and for a G-stack at 3kW at around 300A. High temperature reliable operation has been demonstrated for both devices up to 95°C. Both types of devices were tested at various pulse widths and duty cycles. Both optical power and wavelength dependencies on the various conditions have been studied.
Databáze: OpenAIRE