A new set-up of Mössbauer Spectroscopic Microscope to study the correlation between Fe impurities and lattice defects in Si crystals
| Autor: | Keiko Ogai, Hirotaka Fujita, Tomio Watanabe, Yoshihito Harada, Yutaka Yoshida, Kazuaki Matsumuro, Yuji Ino, Kazuo Hayakawa, Koichi Moriguchi, Kenichi Yukihira, Hiroyoshi Soejima |
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| Rok vydání: | 2017 |
| Předmět: |
Microscope
Materials science 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences law.invention Inorganic Chemistry Crystallography law Impurity Lattice defects 0103 physical sciences Mössbauer spectroscopy Materials Chemistry Wafer Diffusion (business) 010306 general physics 0210 nano-technology |
| Zdroj: | Journal of Crystal Growth. 468:489-492 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2016.12.109 |
| Popis: | A new set-up of “Mossbauer Spectroscopic Microscope (MSM)” is applied to study not only the diffusion of Fe in a single-crystalline Si, but also a correlation between Fe impurities and the lattice defects in a multi-crystalline (mc-) Si. In addition to substitutional Fe s 0 and interstitial Fe i 0 components, the Mossbauer spectrum of mc-Si contains a new component assigned to “Fe i -defect associations”. All three components appear to distribute inhomogeneously, and to correlate with the defect distributions. These results are clearly different from that of the single crystalline Si wafer. |
| Databáze: | OpenAIRE |
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