| Popis: |
In this article, we demonstrate a miniaturized high-linearity (IIP3 = 8 dBm at 4 GHz) 3–5-GHz ultrawideband low-noise amplifier (LNA) implemented in a standard 0.18-μm CMOS technology. The inductive-series peaking technique was used to enhance the gain and bandwidth performances of the LNA. The measurement results show voltage gain greater than 10 dB, reverse isolation (S12) lower than −15 dB, and noise figure lower than 3.3 dB were achieved for frequencies lower than 5 GHz. In addition, input return loss (S11) lower than −8 dB was achieved for frequencies lower than 4.5 GHz. The chip area is only 0.4 mm2, excluding the test pads. This LNA drains 8.75 mA current at supply voltage of 2 V, i.e., it only consumes 17.5 mW power. These results are helpful for RFIC designers to realize miniaturized high-linearity RF receiver front-end ICs. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 524–526, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22175 |
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