Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70%
| Autor: | Evgeniya I Davydova, A. A. Marmalyuk, T. A. Bagaev, A. I. Danilov, A. Yu. Andreev, A A Padalitsa, S. M. Sapozhnikov, A.V. Podkopaev, A. V. Lobintsov, E.B. Ivanova, V. A. Simakov, K. Yu. Telegin, Maxim A. Ladugin |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Fabrication Materials science Laser diode Equivalent series resistance business.industry Physics::Optics Statistical and Nonlinear Physics Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Laser 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention 010309 optics Semiconductor law 0103 physical sciences Optoelectronics Electrical and Electronic Engineering business Quantum well Voltage |
| Zdroj: | Quantum Electronics. 47:291-293 |
| ISSN: | 1468-4799 1063-7818 |
| DOI: | 10.1070/qel16365 |
| Popis: | The results of the development and fabrication of laser diode bars (λ = 800 – 810 nm) based on AlGaAs/GaAs quantum-well heterostructures with a high efficiency are presented. An increase in the internal quantum and external differential efficiencies together with a decrease in the working voltage and the series resistance allowed us to improve the output parameters of the semiconductor laser under quasi-cw pumping. The output power of the laser diode bars with a 5-mm transverse length reached 210 W, and the efficiency was ~70%. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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