Initial Stages of Atomic Layer Deposition of Tantalum Nitride on SiO2 and Porous Low-κ Substrates Modified by a Branched Interfacial Organic Layer: Chemisorption and the Transition to Steady-State Growth
| Autor: | Kevin J. Hughes, Manish Sharma, James R. Engstrom, Abhishek Dube |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Inorganic chemistry Partial pressure Surfaces Coatings and Films Electronic Optical and Magnetic Materials Atomic layer deposition chemistry.chemical_compound General Energy Chemical engineering X-ray photoelectron spectroscopy Tantalum nitride chemistry Chemisorption Molecule Amine gas treating Physical and Theoretical Chemistry Porosity |
| Zdroj: | The Journal of Physical Chemistry C. 116:21948-21960 |
| ISSN: | 1932-7455 1932-7447 |
| Popis: | We have examined the initial stages of atomic layer deposition (ALD) of TaNx on SiO2, a porous low-κ SiO2-based material, and both of these substrates modified by a branched interfacial organic layer, using in situ X-ray photoelectron spectroscopy (XPS) as the primary analytical method. The interfacial organic layer examined was poly(ethylene imine) (PEI), a branched molecule with amine functionality. We find that PEI alters both the density and nature of the species formed after the chemisorption of Ta[N(CH3)2]5, which represents the first half-cycle of ALD. In particular, PEI suppresses chemisorption of Ta[N(CH3)2]5 on SiO2 while enhancing it on low-κ. Results from XPS suggest that the Ta species on low-κ and both surfaces modified by PEI are formed in reduced concentrations while also retaining more N(CH3)2 ligands. From angle-resolved XPS, PEI acts as an effective barrier to Ta penetration of porous low-κ, even for exposures to Ta[N(CH3)2]5 at many mTorr of partial pressure. Concerning ALD, growth on ... |
| Databáze: | OpenAIRE |
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