Critical issues in the heteroepitaxial growth of alkaline-earth oxides on silicon
| Autor: | J. Lettieri, Darrell G. Schlom, J. H. Haeni |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Materials science
Reflection high-energy electron diffraction Silicon business.industry Oxide chemistry.chemical_element Crystal growth Surfaces and Interfaces Condensed Matter Physics Epitaxy Surfaces Coatings and Films Crystallography chemistry.chemical_compound Electron diffraction chemistry Optoelectronics Thin film business Molecular beam epitaxy |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 20:1332-1340 |
| ISSN: | 1520-8559 0734-2101 |
| Popis: | The critical aspects of the epitaxial growth of alkaline-earth oxides on silicon are described in detail. The step by step transition from the silicon to the alkaline-earth oxide as shown through reflection high energy electron diffraction is presented, with emphasis placed on the favorable interface stability, oxidation, structural, and strain considerations for each stage of the growth via molecular beam epitaxy. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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