Removal of ion-implanted photoresists on GaAs using two organic solvents in sequence
| Autor: | Jihoon Na, Sangwoo Lim, Seunghyo Lee, Eunseok Oh |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Formamide chemistry.chemical_classification Materials science Nitromethane Inorganic chemistry General Physics and Astronomy 02 engineering and technology Surfaces and Interfaces General Chemistry Polymer Photoresist 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Surfaces Coatings and Films Ion chemistry.chemical_compound Ion implantation chemistry Etching (microfabrication) 0103 physical sciences Organic chemistry 0210 nano-technology Acetonitrile |
| Zdroj: | Applied Surface Science. 376:34-42 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2016.03.100 |
| Popis: | Organic solvents can effectively remove photoresists on III–V channels without damage or etching of the channel material during the process. In this study, a two-step sequential photoresist removal process using two different organic solvents was developed to remove implanted ArF and KrF photoresists at room temperature. The effects of organic solvents with either low molar volumes or high affinities for photoresists were evaluated to find a proper combination that can effectively remove high-dose implanted photoresists without damaging GaAs surfaces. The performance of formamide, acetonitrile, nitromethane, and monoethanolamine for the removal of ion-implanted ArF and KrF photoresists were compared using a two-step sequential photoresist removal process followed by treatment in dimethyl sulfoxide (DMSO). Among the various combinations, the acetonitrile + DMSO two-step sequence exhibited the best removal of photoresists that underwent ion implantation at doses of 5 × 1013–5 × 1015 atoms/cm2 on both flat and trench-structured GaAs surfaces. The ability of the two-step process using organic solvents to remove the photoresists can be explained by considering the affinities of solvents for a polymer and its permeability through the photoresist. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect