Crystalline texture in hafnium diboride thin films grown by chemical vapor deposition

Autor:	Gregory S. Girolami, Do Young Kim, Yu Yang, John R. Abelson, Sreenivas Jayaraman
Rok vydání:	2006
Předmět:	Materials science Nucleation Chemical vapor deposition Condensed Matter Physics Epitaxy Microstructure Amorphous solid Inorganic Chemistry chemistry.chemical_compound Crystallography chemistry Chemical engineering Materials Chemistry Texture (crystalline) Thin film Hafnium diboride
Zdroj:	Journal of Crystal Growth. 294:389-395
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2006.05.035
Popis:	The texture evolution of hafnium diboride (HfB 2 ) thin films grown by chemical vapor deposition from the single source precursor Hf(BH 4 ) 4 was studied. Films grown on amorphous substrates show a (0 0 0 1) orientation at growth temperatures ⩽700 °C, but a (1 0 1 0) orientation at 800 °C and above. Single-crystal substrates greatly influence the preferred orientation and in-plane texture of the films: (1 0 1 0) orientation is favored on Si (0 0 1), whereas there is a strong tendency to grow in a (0 0 0 1) orientation on Si (1 1 1). At a growth temperature of 950 °C, HfB 2 can be epitaxially grown on Si (1 1 1) substrates.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::64c975c33494c83e1df41e5851706eee https://doi.org/10.1016/j.jcrysgro.2006.05.035 Zobrazit plný text záznamu Full Text from ScienceDirect