Theoretical calculations of electron mobility in ternary III‐V compounds

Autor: J. R. Hauser, J. W. Harrison
Rok vydání: 1976
Předmět:
Zdroj: Journal of Applied Physics. 47:292-300
ISSN: 1089-7550
0021-8979
DOI: 10.1063/1.322315
Popis: Theoretical calculations have been made of the electron mobility in several ternary III‐V semiconductor systems. The scattering mechanisms included in the analysis are polar‐optical‐phonon scattering, piezoelectric scattering, alloy scattering, and ionized‐impurity scattering. Models are also presented and discussed for the variations of material parameters with alloy composition which are needed in the mobility calculations.
Databáze: OpenAIRE