Theoretical calculations of electron mobility in ternary III‐V compounds
Autor: | J. R. Hauser, J. W. Harrison |
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Rok vydání: | 1976 |
Předmět: | |
Zdroj: | Journal of Applied Physics. 47:292-300 |
ISSN: | 1089-7550 0021-8979 |
DOI: | 10.1063/1.322315 |
Popis: | Theoretical calculations have been made of the electron mobility in several ternary III‐V semiconductor systems. The scattering mechanisms included in the analysis are polar‐optical‐phonon scattering, piezoelectric scattering, alloy scattering, and ionized‐impurity scattering. Models are also presented and discussed for the variations of material parameters with alloy composition which are needed in the mobility calculations. |
Databáze: | OpenAIRE |
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