Effect of siliconizing with molten salt on the wear resistance and corrosion resistance of AISI 302 stainless steel
| Autor: | Fagen Li, Chengxian Yin, Nijun Xu, Juanqin Xue, Tao Guanyu, Changbin Tang |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Toughness Materials science Passivation Silicon Metallurgy Intermetallic chemistry.chemical_element 02 engineering and technology Surfaces and Interfaces General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Indentation hardness Surfaces Coatings and Films Corrosion chemistry 0103 physical sciences Materials Chemistry Molten salt 0210 nano-technology Current density |
| Zdroj: | Surface and Coatings Technology. 382:125217 |
| ISSN: | 0257-8972 |
| Popis: | An alloyed Fe Si intermetallic compound layer was prepared on the surface of 302 stainless steel via a nonelectrolytic molten salt silicon infiltration method at different holding times (2 h and 4 h). The wear resistances of the substrate and siliconized layers were evaluated through microhardness, toughness, friction and wear testing. The corrosion behavior and electrochemical corrosion performance of the substrate and siliconized layers in H2SO4 were evaluated through static immersion and electrochemical testing, and the main factors affecting the corrosion behavior were analyzed. The results showed that the 2-h and 4-h siliconized layers exhibited better wear resistance and pitting resistance than the 302 substrates; these enhancements were mainly due to the alloyed Fe Si intermetallic compound formed on the surface of the siliconized layer. However, the 2-h and 4-h siliconized layers exhibited different wear resistance and corrosion resistance. The wear volume of the 2-h siliconized layer was 82.5% less than that of the base material and approximately 40% that of the 4-h siliconized layer. The 4-h silicon-infiltrated layer exhibited excellent pitting resistance and passivation characteristics in 10 wt% H2SO4, and the self-corrosion current density of this layer was orders of magnitude less than that of the 2-h silicon-infiltrated layer |
| Databáze: | OpenAIRE |
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