Effects of post-deposition annealing in O2 on the electrical characteristics of LaAlO3 films on Si

Autor:	M. C. Hugon, Karen Paz Bastos, Carlos Driemeier, B. Agius, Israel Jacob Rabin Baumvol, L. Miotti, Vincent Edon
Rok vydání:	2005
Předmět:	Materials science Physics and Astronomy (miscellaneous) X-ray photoelectron spectroscopy Silicon chemistry Sputtering Annealing (metallurgy) Analytical chemistry chemistry.chemical_element Thin film Sputter deposition Rutherford backscattering spectrometry Semimetal
Zdroj:	Applied Physics Letters. 87:022901
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.1989447
Popis:	LaAlO3 films were deposited on p-type Si(100) by sputtering from a LaAlO3 target. C×V characteristics were determined in nonannealed and O2-annealed capacitors having LaAlO3 films as dielectric and RuO2 as top electrode. Thermal annealing in O2 atmosphere reduced flat band voltage to acceptable values for advanced Si-based devices. O16–O18 isotopic substitution was characterized by Rutherford backscattering spectrometry and nuclear resonant reaction profiling. Chemical analysis of the films was accomplished by x-ray photoelectron spectroscopy. The electrical improvements observed after thermal annealing in O2 were attributed to the incorporation of oxygen from the gas phase, possibly healing oxygen vacancies in the films and providing mobile oxygen to the interface.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::64b16cbed586a661c5b249dad2495c50 https://doi.org/10.1063/1.1989447 Zobrazit plný text záznamu