The study of the unique features of MBE group III nitrides and the influence of the growth geometry configuration on the thickness uniformity of epitaxial layers
Jazyk: | ruština |
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Rok vydání: | 2021 |
Předmět: | |
DOI: | 10.18720/spbpu/3/2021/vr/vr21-4320 |
Popis: | ÐÐ°Ð½Ð½Ð°Ñ ÑабоÑа поÑвÑÑена изÑÑÐµÐ½Ð¸Ñ Ð¾ÑобенноÑÑей ÑоÑÑа бÑÑеÑнÑÑ Ñлоев в III-N ÑÑÑÑкÑÑÑÐ°Ñ Ð¸ влиÑÐ½Ð¸Ñ ÑоÑÑовой геомеÑÑии (ÑаÑÑÑоÑÐ½Ð¸Ñ Ð¸ÑÑоÑник-подложка и ÑÐ³Ð»Ñ Ð¼ÐµÐ¶Ð´Ñ Ð¾ÑÑÑ Ð¸ÑÑоÑника и веÑÑикалÑной оÑи) на одноÑодноÑÑÑ Ð¾ÑаждениÑ. ÐадаÑи, коÑоÑÑе ÑеÑалиÑÑ Ð² Ñ Ð¾Ð´Ðµ ÑабоÑÑ: 1. ÐзÑÑение оÑобенноÑÑей ÑоÑÑа III-N ÑÑÑÑкÑÑÑ Ð¼ÐµÑодами молекÑлÑÑно-лÑÑевой ÑпиÑакÑии; 2. ÐÑÑледование Ñоли бÑÑеÑнÑÑ Ñлоев в пÑибоÑÐ°Ñ Ð½Ð° оÑнове даннÑÑ Ñоединений; 3. ÐÑÑледование влиÑÐ½Ð¸Ñ ÑоÑÑовой геомеÑÑии на одноÑодноÑÑÑ Ñлоев, полÑÑаемÑÑ Ð¼ÐµÑодами молекÑлÑÑно-лÑÑевой ÑпиÑакÑии; 4. ÐпÑимизаÑÐ¸Ñ ÑоÑÑовой геомеÑÑии на оÑновании ÑеоÑеÑиÑеÑкого ожиданиÑ. РабоÑа пÑоведена на базе ÐÑикладной лабоÑаÑоÑии ÐÐР«ÐТл. Ð ÑезÑлÑÑаÑе бÑли пÑоанализиÑÐ¾Ð²Ð°Ð½Ñ Ð³ÐµÐ¾Ð¼ÐµÑÑиÑеÑкие ÑакÑоÑÑ ÑоÑÑа ÑÑÑÑкÑÑÑ, ÑеоÑеÑиÑеÑки ÑмоделиÑован маÑемаÑиÑеÑкий аппаÑÐ°Ñ ÑаÑÑеÑа пÑоÑÐ¸Ð»Ñ ÑаÑпÑÐµÐ´ÐµÐ»ÐµÐ½Ð¸Ñ Ð¾Ñаждаемого ÑÐ»Ð¾Ñ Ð¿Ð¾ подложке и полÑÑаемой одноÑодноÑÑи. Ðа оÑновании пÑоведеннÑÑ ÑаÑÑеÑов бÑла опÑимизиÑована ÑоÑÑÐ¾Ð²Ð°Ñ Ð³ÐµÐ¾Ð¼ÐµÑÑÐ¸Ñ Ð´Ð°Ð½Ð½Ð¾Ð¹ лабоÑаÑоÑной ÑÑÑановки. The current work is dedicated to the study of the growth conditions of buffer layers within III-N structures and the influence of the source-substrate distance on the uniformity of epitaxial layers. The following goals were set for this research: 1. Study of the unique features of group III nitrides by MBE methods; 2. Study of the role of buffer layers in devices based on III-N; 3. Study of the influence of the growth geometry on the uniformity of the deposited layers; 4. Growth geometry optimization based on theoretical expectations. The work was carried out at the âSemiTEqâ Application laboratory. As a result, the geometrical factors of the growth have been analyzed, the mathematical apparatus for calculating the profile of the distribution of the thickness of grown layers over the substrate and the resulting uniformity has been developed. The growth geometry of the laboratory set-up has been optimized based on the calculations performed. |
Databáze: | OpenAIRE |
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