A dual core power combining digital power amplifier for 802.11b/g/n with +26.8dBm linear output power in 28nm CMOS
| Autor: | Renaldi Winoto, Philip Godoy, Xingliang Zhao, Alden Wong, Amir Ghaffari, Randy Tsang, Sai-Wang Tam, Hao Li, Ovidiu Carnu, Ashkan Olyaei |
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| Rok vydání: | 2017 |
| Předmět: |
Power supply rejection ratio
Power-added efficiency Engineering Switched-mode power supply business.industry Amplifier 020208 electrical & electronic engineering RF power amplifier Electrical engineering Power bandwidth 020206 networking & telecommunications 02 engineering and technology Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Electronic engineering Linear amplifier business Direct-coupled amplifier |
| Zdroj: | 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). |
| DOI: | 10.1109/rfic.2017.7969050 |
| Popis: | This paper presents a digital power amplifier with two cores that are power combined for a Psat of +32.5dBm. Assisted by an on-chip digital pre-distortion, a transmitted output power of +26.8dBm for 802.11g 54 Mbps 64-QAM is achieved. This is the highest reported linear output power for a digital power amplifier designed for 802.11b/g/n applications in bulk 28nm CMOS. A total area of 0.36mm2 is used for the power amplifier cores and combiner. Drawing off of a 3.3V supply, this power amplifier has a drain efficiency of 21.2% at the maximum linear output power. |
| Databáze: | OpenAIRE |
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