High Electrical Resistivity $1.55~\mu$ m Photoconductive Switch Using a Barrier Structure
| Autor: | Wan Khai Loke, Kian Hua Tan, Satrio Wicaksono, Soon Fatt Yoon |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
business.industry 02 engineering and technology Omega Optical switch Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Barrier layer 020210 optoelectronics & photonics Electrical resistivity and conductivity 0202 electrical engineering electronic engineering information engineering Optoelectronics Electrical and Electronic Engineering Photonics business Quantum tunnelling Molecular beam epitaxy Photonic crystal |
| Zdroj: | IEEE Photonics Technology Letters. 31:1670-1673 |
| ISSN: | 1941-0174 1041-1135 |
| Popis: | We propose a low temperature grown Be-doped InGaAs vertically aligned barrier structure to increase the dark electrical resistivity of the $1.55~\mu \text{m}$ photoconductive switch. The insertion of a 100 nm-thick AlAs0.56 Sb0.44 barrier layer with a large conduction band offset to In0.53 Ga0.47As blocks the flow of the majority carrier. In this study, samples are grown using a molecular beam epitaxy system. I-V measurement shows that the effective dark electrical resistivity of the samples increases from $0.5\Omega $ cm to $8.5\times 10^{4}\Omega $ cm. The increase of barrier thickness from 100 nm to 400 nm does not increase the dark electrical resistivity further. The photo-response of the samples is also measured and analyzed. This study demonstrates a new approach to achieve high electrical resistivity in a photoconductive switch. |
| Databáze: | OpenAIRE |
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