Improved precision methodology for access resistance extraction using Kelvin test structures

Autor:	Julien Rosa, G. Morin, Giancarlo Castaneda, Antoine Cros, Francois Dieudonne
Rok vydání:	2012
Předmět:	Reduction (complexity) Length measurement Engineering Access resistance Equivalent series resistance business.industry Stochastic process Extraction (chemistry) MOSFET Electronic engineering Wafer business
Zdroj:	2012 IEEE International Conference on Microelectronic Test Structures.
DOI:	10.1109/icmts.2012.6190634
Popis:	An improved methodology for MOSFETs access resistance extraction using Kelvin test structures is presented. By a drastic reduction of the influence of the device stochastic variations, along with an improved methodology for sub 50nm technologies, one site fast inline extraction can be performed with precision, allowing measurement of systematic series resistance variations on wafer.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::648d77c46a0527711f9cc7f32b974ac4 https://doi.org/10.1109/icmts.2012.6190634 Zobrazit plný text záznamu