| Autor: |
David J. Dunstan, A. D. Prins, Ian L. Spain, John D. Lambkin |
| Rok vydání: |
1988 |
| Předmět: |
|
| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| Popis: |
The photoluminescence spectrum of a GaAs/GaAlAs multiple quantum well p-i-n diode has been measured as a function of pressure. Room temperature measurements were carried out in a diamond anvil cell to about 4 GPa (40 kbars), and at 77 K to about 0.8 GPa in a conventional high pressure apparatus. Shifts in photoluminescence peaks originating from the GaAlAs capping layer and two regions of the multiple quantum well layers of different thicknesses are discussed in terms of a model for the pressure shifts in the r and X-states of these components. A brief discussion of the emission intensities is also given.© (1988) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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