| Autor: |
Farehanim, Uda Hashim, M. K. Md Arshad, Ramzan Mat Ayub, A. H. Azman, S. Norhafizah, M. Nurfaiz, M.Z. Kamarudin, Mohamad Faris Mohamad Fathil, M. Wesam Al-Mufti, M. N. M. Nuzaihan |
| Rok vydání: |
2015 |
| Předmět: |
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| Zdroj: |
Advanced Materials Research. 1109:6-10 |
| ISSN: |
1662-8985 |
| DOI: |
10.4028/www.scientific.net/amr.1109.6 |
| Popis: |
Silicon dioxide film has been used as the gate dielectric material in MOS device technology for decades. The film is normally grown in a diffusion furnace using a dry thermal oxidation process. As the device is scaled down to nanometer dimensions, the SiO2 film uniformity requirement is more stringent than ever. In this paper, the effect of furnace temperature and the flow rate of oxygen gas on wafer temperature distribution was investigated. The result was recorded by using the Infrared Thermometer with Dual Laser Targeting device (IRT5000). We have found that the uniformity of temperature distribution on the wafer is almost directly proportional to the O2 flow rate for the entire furnace temperature range (900 - 1050°C). On the other hand, the effect of O2 flow rate on wafer temperature distributions clearly shows two distinct regions; for furnace temperatures of less than 1000 °C, the higher the O2 flow rate, the better the uniformity. For the furnace temperatures of more than 1000 °C, we did not observe any clear dependency of wafer temperature distribution on O2 flow rate. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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